SYSTEMS AND METHODS FOR SUB-ZERO THRESHOLD CHARACTERIZATION IN A MEMORY CELL

摘要

Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.

主权项

1. A memory system, comprising:
a memory cell characterization circuit operable to:
program a first cell of a solid state memory device to a negative voltage, the negative voltage being characterized as an interim voltage;program a second cell of the solid state memory device to a positive voltage;detect a voltage shift in the first cell when the second cell is being programmed; andcalculate an actual voltage on the first cell based on the voltage shift and the interim voltage.