METHOD FOR PERFORMING METALLO-ORGANIC CHEMICAL VAPOR DEPOSITION OF TITANIUM NITRIDE AT REDUCED TEMPERATURE

摘要

A process for chemical vapor deposition of titanium nitride film using thermal decomposition of a metal-organic compound is disclosed. In particular, the deposition of titanium nitride film from tetrakis dimethylamino-titanium (TDMAT) is performed at a temperature preferably below 350° C. in the presence of helium and nitrogen. The process is performed at a total pressure of about 5 torr, a nitrogen dilutant gas flow of at least 500 sccm, preferably about 1000 sccm, and an edge purge gas flow of at least 500 sccm. These process parameters, coupled with an improved thermal conduction between the wafer and the heated pedestal, lead to a conformal deposition of titanium nitride film at a rate of at least 6 Å/sec.