发明名称 METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
摘要 A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
申请公布号 EP1860213(A1) 申请公布日期 2007.11.28
申请号 EP20060728999 申请日期 2006.03.13
申请人 RICOH COMPANY, LTD. 发明人 IWATA, HIROKAZU;SARAYAMA, SEIJI;FUKUDA, MINORU;TAKAHASHI, TETSUYA;TAKAHASHI, AKIRA
分类号 C30B9/00;C30B15/00;C30B15/32;C30B17/00;C30B29/40 主分类号 C30B9/00
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