发明名称 |
Semiconductor light emitting device having metal reflective layer |
摘要 |
A semiconductor light emitting device including: a support substrate; a composite connection layer formed above the support substrate, the composite connection layer including a first connection layer and a second connection layer; a diffusion barrier layer formed above the composite connection layer; a semiconductor lamination structure formed above the diffusion barrier layer; and a reflective electrode layer formed between the diffusion barrier layer and the semiconductor lamination structure, wherein: at least one of the first and second connection layers is made of eutectic material; and the diffusion barrier layer has a lamination structure having TaN layers sandwiching at least one refractory metal layer made of one or more refractory metal materials of Ta, Ti, Mo, W and TiW or alloy thereof. It is possible to prevent defects such as stripping and cracks at bonding planes and improve reliability of a final semiconductor light emitting device. |
申请公布号 |
US2008169481(A1) |
申请公布日期 |
2008.07.17 |
申请号 |
US20070906903 |
申请日期 |
2007.10.04 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
KOBAYASHI SEIICHIRO;YOSHIMIZU KAZUYUKI |
分类号 |
H01L33/10;H01L33/30;H01L33/34;H01L33/38;H01L33/40 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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