发明名称 |
Structure to improve MOS transistor on-breakdown voltage and method of making the same |
摘要 |
A novel MOS transistor structure and methods of making the same are provided. The structure includes a MOS transistor formed on a semiconductor substrate of a first conductivity type with a plug region of first conductivity type formed in the drain extension region of second conductivity type (in the case of a high voltage MOS transistor) or in the lightly doped drain (LDD) region of second conductivity type (in the case of a low voltage MOS transistor). Such structure leads to higher on-breakdown voltage. The inventive principle applies to MOS transistors formed on bulky semiconductor substrate and MOS transistors formed in silicon-on-insulator configuration.
|
申请公布号 |
US2008217693(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070714569 |
申请日期 |
2007.03.06 |
申请人 |
WANG SHEN-PING;HUANG TSUNG-YI;WANG WEN-LIANG |
发明人 |
WANG SHEN-PING;HUANG TSUNG-YI;WANG WEN-LIANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|