发明名称 PROCESS FOR FABRICATING PIEZOELECTRIC ELEMENT
摘要 In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.
申请公布号 KR100880306(B1) 申请公布日期 2009.01.28
申请号 KR20077015924 申请日期 2007.07.12
申请人 发明人
分类号 H01L41/08;H01L41/09;B41J2/14;B41J2/16;H01L41/04;H01L41/18;H01L41/187;H01L41/22;H01L41/257;H01L41/332 主分类号 H01L41/08
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