发明名称 |
METHOD FOR MANUFACTURING DISPLAY DEVICE |
摘要 |
Etching is performed using mask layers formed by a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensity, in a method for manufacturing a display device including an inverted staggered thin film transistor with a channel-etched structure. Further, a gate wiring layer and a source wiring layer are formed over a substrate in the same step, and the source wiring layer is separated (disconnected) at an intersection of the gate wiring layer and the source wiring layer. The separated source wiring layers are connected to each other electrically through an opening (a contact hole) via a conductive layer formed over a gate insulating layer in the same step as formation of source and drain electrode layers.
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申请公布号 |
US2009104723(A1) |
申请公布日期 |
2009.04.23 |
申请号 |
US20080254589 |
申请日期 |
2008.10.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HOSOYA KUNIO;FUJIKAWA SAISHI;CHIBA YOKO |
分类号 |
G02F1/1368;H01L21/20;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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