SPIN TORQUE MAJORITY GATE DEVICE

摘要

The disclosed technology generally relates to magnetic devices, and more particularly to spin torque devices. In one aspect, a spin torque majority gate device includes a free ferromagnetic layer, a spin mixing layer formed above the free ferromagnetic layer, a non-magnetic tunnelling layer formed above the spin mixing layer, and a plurality of input elements formed above the non-magnetic tunnelling layer, where each input element has a fixed ferromagnetic layer.

主权项

1. A spin torque majority gate device, comprising:
a free ferromagnetic layer; a spin mixing layer formed above the free ferromagnetic layer; a non-magnetic tunnelling layer formed above the spin mixing layer; a plurality of input elements formed above the non-magnetic tunnelling layer, each input element comprising a fixed ferromagnetic layer; and an output element formed above the non-magnetic tunnelling layer and comprising a fixed ferromagnetic layer.