| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device is provided. The semiconductor memory device includes memory strings including drain-side memory cells connected between a bit line and a pipe transistor, and source-side memory cells connected between the pipe transistor and a source line, and a peripheral circuit suitable for applying a pipe gate voltage to a pipe gate of the pipe transistor before applying pass voltages to turn on non-selected memory cells among the drain-side memory cells and the source-side memory cells during a read operation. |
| 申请公布号 |
US2016172048(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201514697447 |
申请日期 |
2015.04.27 |
| 申请人 |
SK hynix Inc. |
发明人 |
SEO Moon Sik;MUN Kyung Sik |
| 分类号 |
G11C16/26;G11C16/04 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
memory strings including drain-side memory cells connected between a bit line and a pipe transistor, and source-side memory cells connected between the pipe transistor and a source line; and a peripheral circuit suitable for applying a pipe gate voltage to a pipe gate of the pipe transistor before applying pass voltages to turn on non-selected memory cells among the drain-side memory cells and the source-side memory cells during a read operation. |
| 地址 |
Gyeonggi-do KR |
