| 发明名称 |
SEQUENTIAL WRITE AND SEQUENTIAL WRITE VERIFY IN MEMORY DEVICE |
| 摘要 |
Some embodiments include apparatuses and methods for performing a first stage of an operation of storing information in a first memory cell and a second memory cell, and performing a second stage of the operation after the first stage to determine whether each of the first and second memory cells reaches a target state. The first memory cell is included in a first memory cell string coupled to a data line through a first select transistor. The second memory cell is included in a second memory cell string coupled to the data line through a second select transistor. |
| 申请公布号 |
US2016172041(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414581631 |
申请日期 |
2014.12.23 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Sakui Koji |
| 分类号 |
G11C16/14;G11C16/34;G11C16/04;G11C11/56 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
performing a first stage of an operation of storing information in a first memory cell and a second memory cell, the first memory cell included in a first memory cell string coupled to a data line through a first select transistor, the second memory cell included in a second memory cell string coupled to the data line through a second select transistor; and performing a second stage of the operation after the first stage to determine whether each of the first and second memory cells reaches a target state. |
| 地址 |
Boise ID US |
