VERTICAL LIGHT EMITTING DIODE WITH V-PIT CURRENT SPREADING MEMBER AND MANUFACTURING METHOD OF THE SAME

摘要

Disclosed are a vertical type light emitting diode and a method of fabricating the same. The vertical type light emitting diode includes: a support substrate; a p-type electrode formed on the support substrate; a p-type semiconductor layer formed on the p-type electrode; an active layer formed on the p-type semiconductor layer; an n-type semiconductor layer formed on the active layer; a nitride semiconductor layer formed on the n-type semiconductor layer and having V-pits filled with the nitride semiconductor layer; and an n-type electrode formed on the nitride semiconductor layer, wherein a plurality of protrusions formed on a growth substrate for growing the nitride semiconductor layer causes the V-pits to be formed in alignment with the plurality of protrusions, and V-pit regions have higher resistance than surrounding regions.