| 发明名称 |
METHOD FOR MANUFACTURING MAGNETIC MEMORY |
| 摘要 |
According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured. |
| 申请公布号 |
US2016268502(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514808347 |
申请日期 |
2015.07.24 |
| 申请人 |
AIKAWA Hisanori;IWAYAMA Masayoshi |
发明人 |
AIKAWA Hisanori;IWAYAMA Masayoshi |
| 分类号 |
H01L43/12;H01L43/08;H01L21/66;H01L43/02 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a magnetic memory comprising:
forming a magnetoresistive element on a substrate; measuring an electrical characteristic of the magnetoresistive element; and applying a voltage to the magnetoresistive element which the electrical characteristic is measured. |
| 地址 |
Seoul KR |
