| 发明名称 |
SOLAR CELL MANUFACTURING METHOD |
| 摘要 |
A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste. |
| 申请公布号 |
US2016268470(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615164874 |
申请日期 |
2016.05.26 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
HAYASHI Naofumi;MORIGAMI Mitsuaki;SHIGEMATSU Masato;MISHIMA Takahiro |
| 分类号 |
H01L31/20;H01L31/0224 |
主分类号 |
H01L31/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solar cell manufacturing method comprising:
forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste. |
| 地址 |
Osaka JP |
