发明名称 |
CIRCUIT SUBSTRATE MANUFACTURING METHOD |
摘要 |
A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide semiconductor layer on the transparent substrate; forming a patterned etch-stop layer made of an insulating material so as to cover at least a center portion of the island-shaped oxide semiconductor layer; depositing a conductive layer over an entire surface of the transparent substrate including a region over the patterned etch-stop layer; forming a patterned resist on the conductive layer; and etching the conductive layer using the patterned resist as a mask to form a patterned conductive layer from the conductive layer, wherein the patterned conductive layer includes a source electrode, a source wiring line, and a drain electrode, and continuing to etch the island-shaped oxide semiconductor thereunder using the patterned conductive layer and the patterned etch-stop layer as a mask to form a cutout in the island-shaped oxide semiconductor layer. |
申请公布号 |
US2016268442(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201615163946 |
申请日期 |
2016.05.25 |
申请人 |
Sharp Kabushiki Kaisha |
发明人 |
HARA Yoshihito;NAKATA Yukinobu |
分类号 |
H01L29/786;H01L27/12;H01L29/24 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, said method comprising:
forming an island-shaped oxide semiconductor layer on the transparent substrate; forming a patterned etch-stop layer made of an insulating material so as to cover at least a center portion of the island-shaped oxide semiconductor layer; depositing a conductive layer over an entire surface of the transparent substrate including a region over the patterned etch-stop layer; forming a patterned resist on the conductive layer; and etching the conductive layer using the patterned resist as a mask to form a patterned conductive layer from the conductive layer, wherein the patterned conductive layer includes a source electrode, a source wiring line, and a drain electrode, and continuing to etch the island-shaped oxide semiconductor thereunder using the patterned conductive layer and the patterned etch-stop layer as a mask to form a cutout in the island-shaped oxide semiconductor layer. |
地址 |
Osaka JP |