| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device and a nonvolatile storage device testing method which are unlikely to cause a short circuit between neighboring floating gates and which can easily detect a short circuit between neighboring floating gates without using a special test pattern.SOLUTION: A nonvolatile storage device 1 in which memory cells MC each including a floating gate FG and having a layered structure stacked on a semiconductor substrate are arranged in an array in a first direction X and a second direction Y orthogonal to the first direction comprises: a first memory cell MC1 and a second memory cell MC2 which are arranged adjacent to each other in the first direction; and a signal line 20 which is arranged between the first memory cell and the second memory cell and composed of the same layer with the floating gate. |
