发明名称 |
SOUND DETECTING MECHANISM AND PROCESS FOR MANUFACTURING THE SAME |
摘要 |
A sound detecting mechanism in which strain of a diaphragm is suppressed while forming the diaphragm to a required thickness. The sound detecting mechanism has a pair of electrodes arranged on a substrate A to form a capacitor, wherein one electrode of the pain of electrodes is a back electrode C having a through hole Ca corresponding to an acoustic hole and the other electrode is a diaphragm B. A silicon nitride film (303) is provided on the base side of the substrate A with reference to a film body as the diaphragm B being formed on the substrate A. |
申请公布号 |
KR20050088208(A) |
申请公布日期 |
2005.09.02 |
申请号 |
KR20057011780 |
申请日期 |
2005.06.22 |
申请人 |
HOSIDEN K.K.;TOKYO ELECTRON LTD. |
发明人 |
OHBAYASHI YOSHIAKI;YASUDA MAMORU;SAEKI SHINICHI;KOMAI MASATSUGU;KAGAWA KENICHI |
分类号 |
H01L29/84;H04R19/00;H04R19/01 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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