| 摘要 |
A method is provided for reforming a color filter array of a CMOS image sensor, wherein the method includes exposing the first cap oxide layer by removing the first micro-lens, the first cap oxide layer by removing the first micro-lens, the first OCM pattern and the first color filter array; removing the exposed first cap oxide layer; forming a second cap oxide layer on an entire surface of the semiconductor substrate; forming a second color filter array on the second cap oxide layer in correspondence with the unit pixel array region; forming a second OCM pattern on the second color filter array; exposing the metal pad by selectively etching the second cap oxide layer; and forming a second micro-lens on the second OCM pattern.
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