| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of crystallizing a semiconductor thin film formed on an insulating substrate with laser irradiation, which can suitably remove a cap insulating film formed on the semiconductor film. SOLUTION: The method of forming a thin-film transistor includes steps of forming a film structure including a base insulating film, a semiconductor film, and a cap insulating film, sequentially on an insulating substrate; crystallizing the semiconductor film by irradiating the film structure with laser light having a predetermined light intensity distribution; etching and removing a cap insulating film around a channel formation region so as to leave the cap insulating film on the channel formation region in the thin-film transistor; depositing a metallic film on the entire etched substrate; subjecting the resultant structure to heat treatment to cause a reaction of the region with the cap insulating film removed therefrom with the metallic film and to form a metal silicide layer; removing the unreacted metallic film on the cap insulating film; and removing the cap insulating film on the channel formation region. COPYRIGHT: (C)2007,JPO&INPIT |
