| 摘要 |
A semiconductor memory device and a method of manufacturing the same is provided to improve the program of device and speed of the erase operation and the charge loss by forming charge storage layer smaller than the charge storage layer on the tunnel oxide film. A tunnel insulating layer(101) and a first sub-layer(102) are successively formed on a semiconductor substrate(100). The secondary charge storage layer composed of a auxiliary fist and second film is formed by forming the second subsidiary film(103) on the overall structure including first sub-layer and the first sub-layer. The charge storage layer(104), a blocking oxide film(105) and metallic gate layer(106) are laminated on the overall structure in successively. The gate pattern is formed by etching a metallic gate layer, a blocking oxide film, the charge storage layer and auxiliary charge storage layer successively. The first sub-layer has the thickness of 10 Angstrom or 100 Angstrom, and the first sub-layer is formed by the polysilicon layer.
|
