COMPLETE QUASI-STATIC MODELING METHOD OF RADIO FREQUENCY METAL OXIDE SEMICONDUCTOR FILED EFFECT TRANSISTOR

摘要

A method for simulating an RF(Radio Frequency) MOSFET(Metal Oxide Semiconductor Field Effect Transistor) through RF modeling is provided to offer a complete small-signal model capable of expressing all physical phenomena of the RF MOSFET semiconductor device while being simple and direct in a 20 Ghz band. The complete small-signal model expressing all physical phenomena of the RF MOSFET semiconductor device is suggested. Capacitances(Cjs, Cjd, Rsub) related to a substrate signal coupling network are removed. Turn-on/off of a circuit is precisely controlled by adding Cbs, Cbd, and Cmb. The residual current is easily discharged to earth by adding Rsub having a high resistance value to a body while removing the residual current by adding overlap capacitance(cgse, cgde).