发明名称 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF
摘要 A flash memory device includes a memory cell array, a peri circuit unit, an I/O controller, and a controller. The memory cell array includes a plurality of memory cells respectively connected to a plurality of bit line pairs and a plurality word lines. The peri circuit unit is configured to program data into the memory cell array or read data stored in the memory cell array in response to a command input through a control bus. The I/O controller is configured to receive data for programming and supply the data to the peri circuit unit in response to a command provided through a data input/output (I/O) bus. The controller is configured to control the I/O controller to perform a voltage setup operation for a program while the data for program is received.
申请公布号 US2009031080(A1) 申请公布日期 2009.01.29
申请号 US20070950303 申请日期 2007.12.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM YOU SUNG;KIM BYUNG RYUL
分类号 G06F12/00 主分类号 G06F12/00
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