METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING CHEMICAL MECHANICAL POLISHING PROCESS

摘要

PURPOSE: A method for manufacturing a semiconductor device using a chemical mechanical polishing process is provided to divide the tungsten plug from the node by firstly polishing the tungsten film on the first platen, by polishing the insulating layer on the second platen and by secondly polishing the tungsten film on the third platen or by polishing the tungsten film the insulating layer on the third platen at the same time. CONSTITUTION: An insulating layer(210) is formed in on the semiconductor board. The vias are formed by etching the insulating layer. The conductive film is formed on the insulating layer in order to bury the vias. In the first polishing process, the conductive film is etched until the upper side of the insulating layer is exposed. In the second polishing process, the insulating layer is etched as the constant thickness. In the third polishing process protrusion parts(221a,225a) of the conductive film are removed.