Methods for fabricating integrated circuits and components thereof

摘要

Methods for fabricating integrated circuits and components thereof are provided. In accordance with an exemplary embodiment, a method for a fabricating a semiconductor device is provided. The method includes providing a partially fabricated semiconductor device and forming silicide regions outside of the first and second gates. The partially fabricated semiconductor device includes a semiconductor substrate, a first gate formed over the semiconductor substrate, and a second gate formed over the semiconductor substrate and spaced apart from the first gate. Silicide formation between the first gate and the second gate is inhibited.

主权项

1. A method for fabricating a semiconductor device, wherein the method comprises:
providing a partially fabricated semiconductor device, comprising:
a semiconductor substrate;a first gate formed over the semiconductor substrate; anda second gate formed over the semiconductor substrate and spaced apart from the first gate; forming spacers on sidewalls of the first gate and sidewalls of the second gate; forming a mask between the first gate and the second gate; implanting a dopant into the semiconductor substrate to form highly doped source-drain regions outside of the first gate and the second gate and lightly doped source-drain regions underneath the spacers; removing the mask between the first gate and the second gate; depositing a protection layer between the first gate and the second gate; and forming silicide regions outside of the first gate and the second gate; wherein silicide formation between the first gate and the second gate is inhibited by the protection layer.