发明名称 |
Source of X-rays generating a beam of nanometric size and imaging device comprising at least one such source |
摘要 |
A source of X-rays, and imaging device, and an imaging process are provided, including a source of electrons generating an electron beam of nanometric size and a target, the target being designed to send out an X-ray beam upon illumination by the electron beam, the target including one nanowire, for example made of silicon, and a nanowire catalyst, for example made of gold, covering the free end of the nanowire. |
申请公布号 |
US9362081(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201314021367 |
申请日期 |
2013.09.09 |
申请人 |
Commissariat a l'energie atomique et aux energies alternatives |
发明人 |
Bleuet Pierre;Martin Nicolas |
分类号 |
H01J35/08;H01J35/04;G21K7/00;G01N23/04 |
主分类号 |
H01J35/08 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A source of X-rays, comprising:
a source of electrons configured to generate an electron beam of nanometric size; and a target configured to emit an X-ray beam upon illumination by the electron beam, and comprising a plurality of elongated nanostructures each attached at a first end thereof to a substrate and each having a second end disposed at a distance away from a surface of the substrate, each of the plurality of elongated nanostructures comprising:
a first portion, including the first end attached to the substrate and a body extending from the first end toward the second end, comprising a first material configured to generate low-energy X-rays, anda second portion covering the second end and comprising a second material configured to generate high-energy X-rays,wherein the first portion and the second portion have a transverse dimension between 1 nm and 100 nm,wherein the first portion is offset from neighboring first portions among the plurality of elongated nanostructures in a direction of the transverse dimension, andwherein the second portion is offset from neighboring second portions among the plurality of elongated nanostructures in the direction of the transverse dimension. |
地址 |
Paris FR |