发明名称 Semiconductor memory device
摘要 A semiconductor memory device includes a memory cell array configured to include a plurality of word lines, a dock enable buffer configured to receive a clock enable signal, a plurality of command buffers configured to receive a plurality of commands, a refresh control unit configured to sequentially activate the plurality of word lines in a self-refresh mode, a command decoder configured to decode the clock enable signal and the plurality of commands, and to allow the refresh control unit to enter the self-refresh mode or exit from the self-refresh mode, and a buffer control unit configured to disable the plurality of command buffers when the clock enable signal is deactivated, and to enable the plurality of command buffers when the refresh control unit exits from the self-refresh mode.
申请公布号 US9361967(B2) 申请公布日期 2016.06.07
申请号 US201514689994 申请日期 2015.04.17
申请人 SK Hynix Inc. 发明人 Song Choung-Ki
分类号 G11C7/00;G11C11/406;G11C11/402 主分类号 G11C7/00
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A semiconductor memory device comprising: a memory cell array configured to include a plurality of word lines; a clock enable buffer configured to receive a clock enable signal; a plurality of command buffers configured to receive a plurality of commands; a refresh control unit configured to sequentially activate the plurality of word lines in a self-refresh mode; a command decoder configured to decode the clock enable signal and the plurality of commands, and to allow the refresh control unit to enter the self-refresh mode or exit from the self-refresh mode; and a buffer control unit configured to enable the plurality of command buffers when the clock enable signal is activated and to disable the plurality of command buffers when the clock enable signal is deactivated or the word line is activated, in a case in which the refresh control unit performs the word line activation operation in the self-refresh mode.
地址 Gyeonggi-do KR