NOVEL METHODS OF ATOMIC LAYER ETCHING (ALE) USING SEQUENTIAL, SELF-LIMITING THERMAL REACTIONS

摘要

The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. The invention provides a solid substrate obtained according t any of the methods of the invention. The invention further provides a porous substrate obtained according to any of the methods of the invention. The invention further provides a patterned solid substrate obtained according to any of the methods of the invention.