| 摘要 |
Provided is a method for producing a single crystal, comprising: a straight body part formation step for forming the straight body part of a single crystal by bringing a seed crystal into contact with a dopant-added melt in which red phosphorus has been added to a silicon melt so that the resistivity of the single crystal is 0.9 mΩ·cm or lower, and then pulling up the same; and a separating step for separating the single crystal from the dopant-added melt, in a state where the temperature at the top end of the straight body part is 590˚C or higher. |
