发明名称 |
Semiconductor device and driving method of the same |
摘要 |
In the case of reducing an effect of variations in current characteristics of transistors by inputting a signal current to a transistor in a pixel, a potential of a wiring is detected by using a precharge circuit. In the case where there is a difference between a predetermined potential and the potential of the wiring, a charge is supplied to the wiring to perform a precharge by charging rapidly. When the potential of the wiring reaches the predetermined potential, the supply of charge is stopped and a signal current only is supplied. Thus, a precharge is performed only in a period until the potential of the wiring reaches the predetermined potential, therefore, a precharge can be performed for an optimal period. |
申请公布号 |
US9385704(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201313733287 |
申请日期 |
2013.01.03 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Kimura Hajime |
分类号 |
G09G3/36;H03K17/16;G09G3/32 |
主分类号 |
G09G3/36 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A semiconductor device comprising:
a first transistor comprising a source, a drain and a gate; a capacitor; a first current source; a precharge circuit configured to supply a charge to the first transistor, the precharge circuit comprising a circuit; a second transistor comprising a source, a drain and a gate; and a second current source, wherein: the capacitor is electrically connected to the gate of the first transistor; the capacitor is electrically connected to one of the source and the drain of the first transistor; the first current source is electrically connected to the gate of the first transistor; the first current source is electrically connected to the one of the source and the drain of the first transistor; the circuit is electrically connected to the gate of the first transistor; the circuit is electrically connected to the one of the source and the drain of the first transistor; the circuit is electrically connected to the gate of the second transistor; the circuit is electrically connected to one of the source and the drain of the second transistor; the second current source is electrically connected to the circuit; the second current source is electrically connected to the gate of the second transistor; the second current source is electrically connected to the one of the source and the drain of the second transistor; and a current supplied from the first current source flows into the first transistor. |
地址 |
Atsugi-shi, Kanagawa-ken JP |