发明名称 Semiconductor device and driving method of the same
摘要 In the case of reducing an effect of variations in current characteristics of transistors by inputting a signal current to a transistor in a pixel, a potential of a wiring is detected by using a precharge circuit. In the case where there is a difference between a predetermined potential and the potential of the wiring, a charge is supplied to the wiring to perform a precharge by charging rapidly. When the potential of the wiring reaches the predetermined potential, the supply of charge is stopped and a signal current only is supplied. Thus, a precharge is performed only in a period until the potential of the wiring reaches the predetermined potential, therefore, a precharge can be performed for an optimal period.
申请公布号 US9385704(B2) 申请公布日期 2016.07.05
申请号 US201313733287 申请日期 2013.01.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime
分类号 G09G3/36;H03K17/16;G09G3/32 主分类号 G09G3/36
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a first transistor comprising a source, a drain and a gate; a capacitor; a first current source; a precharge circuit configured to supply a charge to the first transistor, the precharge circuit comprising a circuit; a second transistor comprising a source, a drain and a gate; and a second current source, wherein: the capacitor is electrically connected to the gate of the first transistor; the capacitor is electrically connected to one of the source and the drain of the first transistor; the first current source is electrically connected to the gate of the first transistor; the first current source is electrically connected to the one of the source and the drain of the first transistor; the circuit is electrically connected to the gate of the first transistor; the circuit is electrically connected to the one of the source and the drain of the first transistor; the circuit is electrically connected to the gate of the second transistor; the circuit is electrically connected to one of the source and the drain of the second transistor; the second current source is electrically connected to the circuit; the second current source is electrically connected to the gate of the second transistor; the second current source is electrically connected to the one of the source and the drain of the second transistor; and a current supplied from the first current source flows into the first transistor.
地址 Atsugi-shi, Kanagawa-ken JP