| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide wafer which prevents complication of a manufacture process, does not restrict a silicon carbide substrate, and is capable of more surely converting a basal plane dislocation to a threading edge dislocation, and also to provide a silicon carbide semiconductor device using the silicon carbide wafer.SOLUTION: The tip part of the basal plane dislocation 20 of the silicon carbide substrate 1 is converted to the threading edge dislocation 30 by heat-treating the silicon carbide substrate 1 at 1,700-2,200°C in an inert gas atmosphere or in a vacuum, and an epitaxial film 2 where the basal plane dislocation 20 is reduced is crystal-grown by carrying out epitaxial growth of silicon carbide on the silicon carbide substrate 1. |
