| 发明名称 |
METHOD FOR FABRICATING CHALCOGENIDE FILMS |
| 摘要 |
A method for fabricating a chalcogenide film is presented. The method includes providing a substrate in a chamber and performing a first atomic layer deposition process to form a first oxide film on the substrate; performing a first chalcogenization process including introducing a first chalcogen element to transform the first oxide film into a first chalcogenide film; and performing an annealing process on the first chalcogenide film. |
| 申请公布号 |
US2016233322(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201514985010 |
申请日期 |
2015.12.30 |
| 申请人 |
G-FORCE NANOTECHNOLOGY LTD. |
发明人 |
YEH CHAO-HUI;CHIU JEN-KUAN |
| 分类号 |
H01L29/66;H01L21/443;H01L29/24;H01L21/02;H01L21/477 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a chalcogenide film, comprising:
providing a substrate in a chamber; performing a first atomic layer deposition process to form a first oxide film on the substrate; and performing a first chalcogenization process comprising introducing a first chalcogen element to transform the first oxide film into a first chalcogenide film. |
| 地址 |
Kaohsiung City TW |
