STACKED PLANAR DOUBLE-GATE LAMELLAR FIELD-EFFECT TRANSISTOR

摘要

A method of making a field-effect transistor device includes providing a substrate with a fin stack having: a first sacrificial material layer on the substrate, a first semiconductive material layer on the first sacrificial material layer, and a second sacrificial material layer on the first semiconductive material layer. The method includes inserting a dummy gate having a second thickness, a dummy void, and an outer end that is coplanar to the second face. The method includes inserting a first spacer having a first thickness and a first void, and having an outer end that is coplanar to the first face. The method includes etching the first sacrificial material layer in the second plane and the second sacrificial material layer in the fourth plane. The method includes removing, at least partially, the first spacer. The method also includes inserting a second spacer having the first thickness.

主权项

1. A method of making a field-effect transistor device, comprising the steps of:
providing a substrate with a fin stack having a plurality of fins, including:
first sacrificial material layer on the substrate,a first semiconductive material layer on the first sacrificial material layer, anda second sacrificial material layer on the first semiconductive material layer; inserting a dummy gate having a second thickness, a dummy void, and an outer end that is coplanar to a second face of the fin stack; inserting a first spacer having a first thickness and a first void, and having an outer end that is coplanar to a first face of the fin stack; removing, at least partially, the first sacrificial material layer and the second sacrificial material layer by etching the first sacrificial material layer in a second plane and the second sacrificial material layer in a fourth plane; removing the first spacer; inserting a second spacer having the first thickness and a second void onto the first face such that the second spacer exposes and surrounds the first semiconductive material layer; depositing a source/drain region electrically coupled to the first semiconductive material layer on the first face; removing the dummy gate, exposing a third face of the fin stack that is parallel to the first face; wherein the etching the first sacrificial material layer in the second plane and the second sacrificial material layer in the fourth plane is etched to a depth of the second thickness as measured from the second face to the third face, exposing the first semiconductive material layer; depositing a replacement gate on the high-k dielectric layer between the second face and the third face; planarizing the replacement gate at the second face; depositing a replacement gate on the high-k dielectric layer between the second face and the third face; and planarizing the replacement gate at the second face.