ETCHSTOP LAYERS AND CAPACITORS

摘要

Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense etchstop layer is, for example, a high-k material. Capacitors are, for example, metal-insulator-metal (MIM) capacitors and are useful in DRAM (dynamic random access memory) and eDRAM (embedded dynamic random access memory) structures.

主权项

1. A semiconductor device, comprising,
a first inter-layer dielectric (ILD) layer disposed above a silicon substrate; a first etch stop layer disposed on the first ILD layer; a second ILD layer disposed on the first etch stop layer; a second etch stop layer disposed on the second ILD layer; a third ILD layer disposed on the second etch stop layer; a third etch stop layer disposed on the third ILD layer; a metal-insulator-metal (MIM) capacitor formed along sidewalls and a bottom of a trench extending through the third etch stop layer, the third ILD layer, the second etch stop layer, the second ILD layer, and the first etch stop layer; a first plurality of metal lines in the second ILD layer and laterally adjacent the MIM capacitor; and a second plurality of metal lines in the third ILD layer and laterally adjacent the MIM capacitor.