发明名称 DEVICE BY COLD JUNCTION, PROCESS FOR MANUFACTURING DEVICE, AND COLD JUNCTION APPARATUS
摘要 An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO 2 substrates) are bonded at room-temperature to have practical bonding strength.
申请公布号 KR101101896(B1) 申请公布日期 2012.01.02
申请号 KR20087029244 申请日期 2007.05.30
申请人 发明人
分类号 B23K20/00;B23K20/227;B81C3/00 主分类号 B23K20/00
代理机构 代理人
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