发明名称 |
DEVICE BY COLD JUNCTION, PROCESS FOR MANUFACTURING DEVICE, AND COLD JUNCTION APPARATUS |
摘要 |
An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO 2 substrates) are bonded at room-temperature to have practical bonding strength. |
申请公布号 |
KR101101896(B1) |
申请公布日期 |
2012.01.02 |
申请号 |
KR20087029244 |
申请日期 |
2007.05.30 |
申请人 |
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发明人 |
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分类号 |
B23K20/00;B23K20/227;B81C3/00 |
主分类号 |
B23K20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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