| 发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A non-volatile memory device includes a semiconductor body extending in a first direction, an electrode extending in a second direction crossing the first direction, a first floating gate provided between the semiconductor body and the electrode, and a second floating gate provided between the first floating gate and the electrode. The first floating gate is provided via an insulating film on the semiconductor body and has a side surface in the second direction. The second floating gate has a side surface in the second direction. The device further includes a silicon nitride film in contact with the side surface of the second floating gate and a first insulating film that covers the silicon nitride film and is in contact with the side surface of the first floating gate. |
| 申请公布号 |
US2016268388(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201514838459 |
申请日期 |
2015.08.28 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ITOKAWA Hiroshi;TORATANI Kenichiro |
| 分类号 |
H01L29/423;H01L29/49;H01L29/66;H01L21/28;H01L21/02;H01L29/788;H01L29/51 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device comprising:
a semiconductor body extending in a first direction; an electrode extending in a second direction crossing the first direction; a first floating gate provided between the semiconductor body and the electrode, the first floating gate being provided via an insulating film on the semiconductor body and having a side surface in the second direction; a second floating gate provided between the first floating gate and the electrode, the second floating gate having a side surface in the second direction; a silicon nitride film in contact with the side surface of the second floating gate; and a first insulating film covering the silicon nitride film, the first insulating film being in contact with the side surface of the first floating gate. |
| 地址 |
Minato-ku JP |
