| 摘要 |
According to one embodiment, a semiconductor device includes a stacked body and a columnar portion. The stacked body includes a plurality of electrode layers stacked with an insulator between the electrode layers. The columnar portion includes a semiconductor body extending in the stacked body in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor body and the electrode layers. The columnar portion includes a first portion with a first diameter, and a second portion with a second diameter smaller than the first diameter. The first portion has a higher concentration of an impurity than a concentration of the impurity of the second portion. The impurity contains at least one of boron, arsenic, and phosphorus. |
| 主权项 |
1. A semiconductor device comprising:
a stacked body including a plurality of electrode layers stacked with an insulator between the electrode layers; and a columnar portion including a semiconductor body extending in the stacked body in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor body and the electrode layers, the columnar portion including a first portion with a first diameter, and a second portion with a second diameter smaller than the first diameter, the first portion having a higher concentration of an impurity than a concentration of the impurity of the second portion, the impurity containing at least one of boron, arsenic, and phosphorus. |
