发明名称 SEMICONDUCTOR DEVICE HAVING NON-MAGNETIC SINGLE CORE INDUCTOR AND METHOD OF PRODUCING THE SAME
摘要 Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench.
申请公布号 US2016268195(A1) 申请公布日期 2016.09.15
申请号 US201514656770 申请日期 2015.03.13
申请人 GLOBALFOUNDRIES Inc. 发明人 LEE Ki Young;CHAE Moosung M.;KIM Woo Sik
分类号 H01L23/522;H01L49/02;H01L23/532;H01L21/768;H01L21/02 主分类号 H01L23/522
代理机构 代理人
主权项 1. A method comprising: forming an inductor trench in a first dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the first dielectric layer and in strips in the inductor trench; forming first metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias through both the first metal-oxide hard mask and the first dielectric layer; filling the first metal line trenches, first vias, and inductor trench and removing the first metal-oxide hard mask from the first dielectric layer; forming a second dielectric layer and a second metal-oxide hard mask over the filled inductor trench, first vias and first metal line trenches and the first dielectric layer; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias through both the second metal-oxide hard mask and the second dielectric layer down to the first metal line trenches and first vias, respectively; and filling the second metal line trenches, second vias, and second trench.
地址 Grand Cayman KY