SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

主权项

1. A substrate processing method of a substrate which has a recess portion on a surface and in which a deposition film is formed on an opening portion of the recess portion, the deposition film including an upper deposition film on the surface of the substrate, the upper deposition film including a protruding portion protruding from a side wall portion of the recess portion toward an inside of the recess portion on the opening portion of the recess portion, the substrate processing method comprising:
a first irradiation step of irradiating the protruding portion with a particle beam in a direction which forms a first angle with a direction perpendicular to an in-plane direction of the substrate, to remove part of the protruding portion in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the protruding portion with the particle beam in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the protruding portion that remains in the thickness direction.