发明名称 Light-emitting device, light-emitting device package, and light unit
摘要 The light-emitting device, according to one embodiment, comprises: a light-emitting structure including a first conductive semiconductor layer, an active layer formed beneath the first conductive semiconductor layer, and a second conductive semiconductor layer formed beneath the active layer; a reflective electrode arranged beneath the light-emitting structure and having a first region beneath the second conductive semiconductor layer and a second region extending from the first region and penetrating through the second conductive semiconductor layer and the active layer; and an electrode electrically connected to the first conductive semiconductor layer.
申请公布号 US9478710(B2) 申请公布日期 2016.10.25
申请号 US201314401439 申请日期 2013.05.10
申请人 LG INNOTEK CO., LTD. 发明人 Jeong Hwan Hee;Kim So Jung
分类号 H01L33/60;H01L33/40;H01L33/20;H01L33/38;H01L33/08 主分类号 H01L33/60
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A light-emitting device comprising: a light-emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective electrode arranged under the light-emitting structure and comprising a first region under the second conductive semiconductor layer and a second region extending from the first region to pass through the second conductive semiconductor layer and the active layer; an electrode electrically connected to the first conductive semiconductor layer; and a metal layer making contact with the second region of the reflective electrode, wherein a first region of the metal layer is located higher than the active layer, wherein an uppermost surface of the reflective electrode, which extends from the second region of the reflective electrode, overlaps with the electrode in a vertical direction, wherein a second region of the metal layer makes contact with a bottom surface of the second conductive semiconductor layer and a third region of the metal layer extends outward from the second region of the metal layer, wherein the third region of the metal layer is exposed to a lower peripheral portion of the light-emitting structure, and wherein the metal layer is disposed around a lower portion of the light-emitting structure to form a metal channel layer.
地址 Seoul KR