Semiconductor device e.g. DRAM

摘要

In a semiconductor device having a multilayer interlayer insulation layer (2, 3), which is formed on a semiconductor base layer (1) and which consists of layers of different etch rates, and a contact formed within a via (4) in the multilayer interlayer insulation layer (2, 3) for contacting the semiconductor base layer (1), the diameter of the contact is increased in a section adjacent the base layer (1). Also claimed are similar semiconductor devices and a semiconductor device production process involving (a) forming, on the base layer, an interlayer insulation layer (2, 3) having a high etch rate section near the base layer and a low etch rate section remote from the base layer; (b) forming a via (4) through the interlayer insulation layer (2, 3) such that the via diameter increases in the direction towards the base layer (1); and (c) forming a contact in the via for connection to the base layer.