| 摘要 |
PROBLEM TO BE SOLVED: To suppress the contact resistance and leakage current density of a semiconductor storage from increasing after its oxygen annealing processing, by forming a predetermined adhesion layer between its interlayer insulation film and its plate electrode, and by so forming the adhesion layer as not to exist in the interface of the connecting portion between its contact plug and its upper electrode. SOLUTION: An adhesion layer 108 containing the layer made of the material including one or more kinds of Ti, TiN, TiSi, Ta, TaN, W, and WSi is formed in the region present on a second interlayer insulation film 106 which includes the inner surface of each contact opening 107a. Then, by a dry etching method, the adhesion layer 108 in the bottom portion of the contact opening 107a is removed to expose an upper electrode 105 to the external. Subsequently, by so forming through a sputtering method an electrode-material layer made of Pt which is intended to be a plate electrode 109 as to fill with it each contact opening 107a, a contact plug 107 is formed. Continuously, by a dry etching method, the electrode-material layer together with the adhesion layer 108 is processed into a desired shape to form the plate electrode 109.
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