| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferromagnetic tunnel junction element for achieving a high MR ratio required for a magnetic head and a solid magnetic memory (MRAM) and at the same time freely adjusting junction resistance. SOLUTION: Film formation and oxidation processes are repeated at least two times for creating a tunnel barrier layer 15, for example, by forming a first ferromagnetic body layer 11, then forming and oxidizing a conductive layer 12 with a thickness of 0.3 nm or larger and less than 1 nm to form a conductive oxide layer 13, and then forming and oxidizing a conductive layer 14 again, thus forming a high-quality tunnel barrier layer without any oxide of a ferromagnetic body and non-oxidized Al on a junction interface and obtaining a high MR ratio.
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