| 摘要 |
PROBLEM TO BE SOLVED: To improve integration of GMR memory elements by connecting electrically a switching element formed on a single crystal semiconductor layer to either of a magnetoresistive film and a word line. SOLUTION: A magnetoresistive film 47 is formed by laminating a first magnetic layer 44, a non-magnetic layer 45, a second magnetic layer 46 in this order on a single crystal silicon layer 43. The second magnetic layer 46 executes function of a memory layer and the first magnetic layer 44 executes a function of a reproduction layer. A drain region 50 of a field effect transistor 51 is connected electrically to one end of this magnetoresistive film 47. This field effect transistor 51 executes a function of a switching element at the current conduction in the magnetoresistive film 47. A word line (write-in line) 55 is formed in the magnetoresistive film 47 through an insulation layer 54, the magnetoresistive film 47 in an under part of this word line 55 is made a memory cell storing information of one bit and being the minimum unit.
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