Transistor with reduced short channel effects and method

摘要

A method of fabricating a transistor ( 10 ) comprises forming source and drain regions ( 46 ) and ( 47 ) using a first sidewall ( 42 ) and ( 43 ) as a mask and forming a deep blanket source and drain regions ( 54 ) and ( 56 ) using a second sidewall ( 50 ) and ( 51 ) as a mask, the second sidewall ( 50 ) and ( 51 ) comprising at least part of the first sidewall ( 42 ) and ( 43 ).