Silicon semiconductor substrate surface treatment device for manufacturing semiconductor chip, has pressure chamber with separate opening for support plate position, where opening is sealed by plate during pressure build-up in chamber
摘要
<p>The device has a process chamber connected with a lock pressure chamber (S) that includes two support plates (4) serving as a supporting surface for a substrate. The plates are movable from a loading and unloading position into a working position within the process chamber. The pressure chamber has a separate opening for each plate position, where the opening is sealed by the plate during the pressure build-up in the pressure chamber.</p>
