| 摘要 |
In the endohedral fullerene manufacturing method, acceleration energy is applied to an atom ion by using an acceleration electrode so that the atom is implanted into an empty fullerene film formed in advance on an accumulation substrate. This conventional method has a problem that since charged particles constituting an ion beam are only atom ions of the same polarity, a repulsive force functions between the charged particles and the ion beam is diffused especially when implanting an ion of low energy. Accordingly, it is difficult to implant ions of high density into the fullerene film and the yield of the endohedral fullerene is low. Plasma including charged particles of atom ion to be included and charged particles having polarity opposite to the atom ion to be included is carried to the empty fullerene on the accumulation substrate by a uniform magnetic field generated by magnetic field generation means. Acceleration energy is applied to the atom-to-be-included by bias voltage applied to the accumulation substrate and the atom is implanted into the fullerene film. Since an attraction force functions between charged particles constituting the plasma and the plasma is not diffused, it is possible to implant ions of high density even when implanting ions of low energy, thereby increasing the yield of endohedral fullerene. |
