| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light receiving sensitivity of infrared rays in a solid-state imaging apparatus for achieving the simultaneous image pickup of visible rays and infrared rays. <P>SOLUTION: The functional region of infrared ray detection pixels is formed to the deeper place of the functional region of visible ray detection pixels. In the functional region of pixels in the depth direction from the surface of an N type semiconductor substrate, modulation doping is carried out so that the density of N type dopant can be turned to be lower according as it becomes deeper from the surface side of the semiconductor substrate, and P type dopant is carried out so that the peak position of the density of the P type dopant can be turned to be deeper than the peak position of the density of the N type dopant. <P>COPYRIGHT: (C)2008,JPO&INPIT |
