| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor device using the property of a semiconductor substrate having periodical high concentration defect regions, and to provide the method of manufacturing the same. <P>SOLUTION: A GaN semiconductor laser device 50 includes an n-type GaN substrate 12 having a low concentration defect structure region and a high concentration defect structure region periodically arranged on the substrate plane. A laminated structure including an n-type GaN layer 14, an n-type AlGaN clad layer 16, an active layer 20, a p-type GaN light wave guide layer 22, a p-type AlGaN clad layer 24, and a p-type GaN contact layer 26 are formed on the n-type GaN substrate. A through hole 32 is formed at the core portion 12a of the high concentration defect structure region. An ion injection region 52 having a higher resistivity is formed at least on the upper portion of the laminated structure in the line of the extension direction of the through hole 32. The ion injection region 52 is formed by crystal modification. The region of the GaN semiconductor laser device 50 where a current is injected is narrowed by an ion injection region 52. An n-side electrode 30 is formed between the through holes 32. A p-side electrode 28 is formed on just above the n-side electrode 30. <P>COPYRIGHT: (C)2008,JPO&INPIT |
