| 发明名称 |
PROCESS FOR FORMING A PATTERN INCLUDING ON A SEMICONDUCTOR DEVICE |
| 摘要 |
An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.
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| 申请公布号 |
US2009075482(A1) |
申请公布日期 |
2009.03.19 |
| 申请号 |
US20080272221 |
申请日期 |
2008.11.17 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NAGAHARA SEIJI;HIROI MASAYUKI |
| 分类号 |
G03F7/004;H01L21/3105;G03F7/038;G03F7/039;G03F7/11;G03F7/40;H01L21/027;H01L21/768 |
主分类号 |
G03F7/004 |
| 代理机构 |
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代理人 |
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| 主权项 |
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