RRAM retention by depositing Ti capping layer before HK HfO

摘要

The present disclosure relates to a resistance random access memory (RRAM) device architecture where a Ti metal capping layer is deposited before the deposition of the HK HfO resistance switching layer. Here, the capping layer is below the HK HfO layer, and hence no damage will occur during the top RRAM electrode etching. The outer sidewalls of the capping layer are substantially aligned with the sidewalls of the HfO layer and hence any damage that may occur during future etching steps will happen at the outer side walls of the capping layer that are positioned away from the oxygen vacancy filament (conductive filament) in the HK HfO layer. Thus the architecture in the present disclosure, improves data retention.

主权项

1. A resistance random access memory (RRAM) device comprising:
a variable resistance dielectric layer having a top surface and a bottom surface; a cathode disposed over the variable resistance dielectric layer and abutting the top surface; a metal capping layer disposed below the variable resistance dielectric layer and abutting the bottom surface; and an anode disposed below the metal capping layer at a location vertically between the metal capping layer and a semiconductor body, wherein the anode comprises a bump protruding outward from a lower surface of the anode that faces away from the metal capping layer.