Resistive memory cell having a reduced conductive path area

摘要

A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM, may include forming a bottom electrode layer, forming an oxide region of an exposed area of the bottom electrode, removing a region of the bottom electrode layer proximate the oxide region to form a bottom electrode having a pointed tip or edge region, and forming first and second electrolyte regions and first and second top electrodes over the bottom electrode to define distinct first and second memory elements. The first memory element defines a first conductive filament/vacancy chain path from the first portion of the bottom electrode pointed tip region to the first top electrode via the first electrolyte region, and second memory element defines a second conductive filament/vacancy chain path from the second portion of the bottom electrode pointed tip region to the second top electrode via the second electrolyte region.

主权项

1. A method of forming a resistive memory cell, comprising:
forming a bottom electrode layer on a substrate; oxidizing an exposed region of the bottom electrode layer to form an oxide region, wherein a vertical cross section of the oxide region comprises a non-orthogonal shape; removing a region of the bottom electrode layer proximate the oxide region, thereby forming a bottom electrode wherein the non-orthogonal shape of the oxide region creates a pointed tip region at a peripheral edge of the bottom electrode; forming:
(a) a first electrolyte region and first top electrode over a first portion of the pointed tip region of the bottom electrode, such that the first electrolyte region is arranged between the first top electrode and the first portion of the pointed tip region of the bottom electrode to define a first memory element; and(b) a second electrolyte region and second top electrode over a second portion of the pointed tip region of the bottom electrode, such that the second electrolyte region is arranged between the second top electrode and the second portion of the pointed tip region of the bottom electrode to define a second memory element.